Unterhaching, Germany, 28th November 2013 – The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET, but still not as beneficial as with SiC Schottky diodes. As the switching performance demands for new wide band-gap components increases, so do the requirements for the commutation process. The split output topology provides an additional tool to reduce turn-on losses and boost cross-conduction suppression. Installed at the module level it negates the limitations of the SiC MOSFET. The module behaves in inverter applications in the same way as in a boost circuit. This makes it possible to achieve better performance and efficiency than with a SiC JFET or SiC BJT – and enjoy the added advantage of MOSFET technology’s simple gate drive circuit.
For more information please see Vincotech’s article “SiC MOSFET-based Power Modules Utilizing Split Output Topology for Superior Dynamic Behavior” under:
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