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News from Vishay Intertechnology, Inc.


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  • Vishay Launches First Power MOSFETs to Combine WFET� and TrenchFET� GenII Technologies for Exceptionally Low 6.5 nC Qgd and 3.6 mΩ rDS(on) Values

Vishay Launches First Power MOSFETs to Combine WFET� and TrenchFET� GenII Technologies for Exceptionally Low 6.5 nC Qgd and 3.6 mΩ rDS(on) Values

May 24, 2004

The two power MOSFETs are designed for low-side operation in synchronous buck (single- and multi-phase configurations) dc to dc converters in notebook PCs, servers, and VRM modules, as well as in synchronous rectification in fixed telecom systems.

The two power MOSFETs are designed for low-side operation in synchronous buck (single- and multi-phase configurations) dc to dc converters in notebook PCs, servers, and VRM modules, as well as in synchronous rectification in fixed telecom systems.

Siliconix incorporated (NASDAQ: SILI), an 80.4%-owned subsidiary of Vishay Intertechnology, Inc. (NYSE: VSH), today announced the release of the first two power MOSFETs to combine the extremely low Qgd values enabled by WFET� technology with the very low rDS(on) values of TrenchFET� Gen II technology.

The two power MOSFETs released today are designed for low-side operation in synchronous buck (single- and multi-phase configurations) dc to dc converters in notebook PCs, servers, and VRM modules, as well as in synchronous rectification in fixed telecom systems.

The new Si4368DY (PowerPAK� SO-8) and Si7668DP (SO-8) feature on-resistance of 3.6 mΩ (at 4.5 V max.) and a low rDS(on)-times-Qgd value of 23 mΩnC for improvements of 25% and 54%, respectively, over specifications for competing MOSFET devices. Both devices provide an exceptionally low Qgd/Qgs ratio of 0.37 � also 54% better than competing devices � to ensure high �shoot-thru� immunity and to help keep Qg in check for reduced switching losses and more efficient dc-to-dc converter performance. The maximum gate threshold voltage for the Si4368DY and Si7668DP is 1.8 V. Packaged in the thermally enhanced PowerPAK SO-8 package, the Si7668DP also offers lower thermal resistance and greater power dissipation.

Vishay�s innovative WFET technology uses a thicker gate oxide at the bottom of the devices� silicon trench to reduce Crss and Qgd with minimal impact on rDS(on) performance, boosting the efficiency of dc-to-dc converters. With the release of the new devices, designers can now build an all-WFET dc-to-dc converter using the Si4368DY or Si7668DP on the low side and the previously announced Si4390DY or Si7390DP on the high side. The WFET power MOSFETs� low conduction and switching losses translate directly into a 2% improvement in dc-to-dc converter efficiency over competing solutions in typical applications.

By applying WFET technology to its latest high-density silicon in the Si4368DY and Si7668DP, Vishay achieves a transistor density of 300 million cells per square inch and a low specific on-resistance of 12 mΩ/mm2 without compromising switching performance. As a result, the new devices enable design of faster, lighter, smaller, cooler, more efficient, and longer-running products with more robust feature sets.

All WFET power MOSFETs are 100% Rg-tested to ensure that devices perform as specified in high-frequency dc-to-dc applications.

Samples and production quantities of the new WFET TrenchFET Gen II power MOSFETs are available now, with lead times of 10-12 weeks for larger orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $1.25.

Siliconix is a leading manufacturer of power MOSFETs, power ICs, analog switches, and multiplexers for computers, cell phones, fixed communications networks, automobiles, and other consumer and industrial electronic systems. With 2002 worldwide sales of $372.9 million, the Company's facilities include a Class 1 wafer fab dedicated to the manufacture of power products in Santa Clara, California, and an affiliated Class 1 wafer fab located in Itzehoe, Germany. The Company�s products are also fabricated by subcontractors in Japan, Germany, China, and Taiwan. Assembly and test facilities include a company-owned facility in Taiwan, a joint venture in Shanghai, China, and subcontractors in the Philippines, China, Taiwan, Israel, and the United States.

Vishay, a Fortune 1,000 Company listed on the NYSE, is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, and transducers). The Company�s components can be found in products manufactured in a very broad range of industries worldwide. Vishay is headquartered in Malvern, Pennsylvania, and has plants in 17 countries employing over 25,000 people. Vishay can be found on the Internet at http://www.vishay.com.

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Vishay Launches First Power MOSFETs to Combine WFET� and TrenchFET� GenII Technologies for Exceptionally Low 6.5 nC Qgd and 3.6 mΩ rDS(on) Values news release has been viewed 774 times

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